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| 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg Ratings 500 400 400 7 10 3 80 +150 -65 to +150 Unit V V V V A A W C C Electrical characteristics (Tc =25C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCEO VCEO(SUS) VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA ICEO = 10mA IC = 0.2A IEBO = 1mA VCBO = 500V VEBO = 7V IC = 5A, VCE = 5V IC = 5A, IB = 1A IC = 5A, IB1 = 1A IB2 = -2A, RL = 30 ohm Pw = 20 s Duty=<2% Min. 500 400 400 7 Typ. Max. Units V V V V mA mA V V s s s - 1.0 1.0 1.0 1.5 0.5 1.5 0.15 10 Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. 1.55 Units C/W 1 2SC3318 Characteristics FUJI POWER TRANSISTOR Collector-Emitter voltage VCE[V] D.C. current gain hFE Base current IB[A] Collector current IC[A] Collector Output Characteristics DC Current Gain Saturation voltage VCE(sat), VBE(sat)[V] Collector current IC[A] Collector current IC[A] Collector-Emitter voltage VCE[V] Base and Collector Saturation Voltage Safe Operating Area Switching time ton, tstg, tf [s] *1 Switching Time Test Circuit Collector current IC[A] Switching Time 2 |
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